{"title":"Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation","authors":"Jeonghwan Jang, Hyeongu Lee, Mincheol Shin","doi":"10.1016/j.sse.2024.108928","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, we investigate the feasibility of cleaved-gate ferroelectric FET (CG-FeFET) as multi-level cell (MLC) memory devices, by conducting 3-dimensional quantum transport simulations based on time-dependent-Ginzburg–Landau equation, and the non-equilibrium Green’s function method. Our results indicate that CG-FeFET can achieve multi-level operations by utilizing different thicknesses of the ferroelectric layer. We analyze the influence of electron–phonon interaction and also verify that CG-FeFET is robust to noise. Furthermore, we identify the critical role of the spacing between two ferroelectric layers in determining the memory window, considering the effects of polarization cancellation and electrostatic coupling. These findings provide valuable insights into designing stable and reliable nonvolatile memory technologies, which could offer potential solutions for high-density memory requirements.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"216 ","pages":"Article 108928"},"PeriodicalIF":1.4000,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000777","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we investigate the feasibility of cleaved-gate ferroelectric FET (CG-FeFET) as multi-level cell (MLC) memory devices, by conducting 3-dimensional quantum transport simulations based on time-dependent-Ginzburg–Landau equation, and the non-equilibrium Green’s function method. Our results indicate that CG-FeFET can achieve multi-level operations by utilizing different thicknesses of the ferroelectric layer. We analyze the influence of electron–phonon interaction and also verify that CG-FeFET is robust to noise. Furthermore, we identify the critical role of the spacing between two ferroelectric layers in determining the memory window, considering the effects of polarization cancellation and electrostatic coupling. These findings provide valuable insights into designing stable and reliable nonvolatile memory technologies, which could offer potential solutions for high-density memory requirements.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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