Analysis of metal and zinc oxide semiconductor interface resistance using transmission line method

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-03-30 DOI:10.1016/j.sse.2024.108916

Do-Yeon Lee, Woon-San Ko, Ki-Nam Kim, Jun-Ho Byun, Eun-Gi Kim, So-Yeon Kwon, Ga-Won Lee

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引用次数: 0

Abstract

The transmission line method (TLM) is modified to analyze the contact resistance between the metal and zinc oxide semiconductor considering interface resistance. TCAD is used to simulate an ideal defect-less state and compare it with experimental result. It is found that the current transfer length can be overestimated in conventional TLM measurement. The importance of interface resistance is shown through interface trap and Schottky contact effect analysis: Resistance comparison between different metal used device, and the activation energy shift measurement after O₂ pre-annealing. Based on these, the conventional resistance equation for TLM is corrected by separating channel resistance and non-ideal contact resistance. The mobility and temperature coefficient of resistance (TCR) of ZnO channel are extracted using the suggested method. This shows the importance of metal/semiconductor interface resistance in devices using semiconductor channel.

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利用传输线方法分析金属和氧化锌半导体界面电阻

对传输线法（TLM）进行了修改，以分析金属和氧化锌半导体之间的接触电阻（考虑到界面电阻）。使用 TCAD 模拟理想的无缺陷状态，并将其与实验结果进行比较。结果发现，在传统的 TLM 测量中，电流传输长度可能被高估。界面陷阱和肖特基接触效应分析表明了界面电阻的重要性：不同金属器件之间的电阻比较，以及氧气预退火后的活化能转移测量。在此基础上，通过分离沟道电阻和非理想接触电阻，修正了 TLM 的传统电阻方程。利用建议的方法提取了氧化锌沟道的迁移率和电阻温度系数（TCR）。这表明了在使用半导体沟道的器件中金属/半导体界面电阻的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.