Completely annealing-free flexible Perovskite quantum dot solar cells employing UV-sintered Ga-doped SnO2 electron transport layers

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Wooyeon Kim, Jigeon Kim, Dayoung Kim, Bonkee Koo, Subin Yu, Yuelong Li, Younghoon Kim, Min Jae Ko
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Abstract

The electron transport layer (ETL) is a critical component in perovskite quantum dot (PQD) solar cells, significantly impacting their photovoltaic performance and stability. Low-temperature ETL deposition methods are especially desirable for fabricating flexible solar cells on polymer substrates. Herein, we propose a room-temperature-processed tin oxide (SnO2) ETL preparation method for flexible PQD solar cells. The process involves synthesizing highly crystalline SnO2 nanocrystals stabilized with organic ligands, spin-coating their dispersion, followed by UV irradiation. The energy level of SnO2 is controlled by doping gallium ions to reduce the energy level mismatch with the PQD. The proposed ETL-based CsPbI3-PQD solar cell achieves a power conversion efficiency (PCE) of 12.70%, the highest PCE among reported flexible quantum dot solar cells, maintaining 94% of the initial PCE after 500 bending tests. Consequently, we demonstrate that a systemically designed ETL enhances the photovoltaic performance and mechanical stability of flexible optoelectronic devices.

Abstract Image

采用紫外烧结掺杂 Ga 的 SnO2 电子传输层的完全无退火柔性 Perovskite 量子点太阳能电池
电子传输层(ETL)是包晶量子点(PQD)太阳能电池中的关键部件,对其光伏性能和稳定性有重大影响。低温 ETL 沉积方法尤其适用于在聚合物基底上制造柔性太阳能电池。在此,我们提出了一种用于柔性 PQD 太阳能电池的室温处理氧化锡(SnO2)ETL 制备方法。该工艺包括用有机配体稳定合成高结晶度的二氧化锡纳米晶体,对其分散体进行旋涂,然后进行紫外辐照。通过掺入镓离子来控制二氧化锡的能级,以减少与 PQD 的能级失配。所提出的基于 ETL 的 CsPbI3-PQD 太阳能电池实现了 12.70% 的功率转换效率 (PCE),是目前已报道的柔性量子点太阳能电池中最高的 PCE,在 500 次弯曲测试后仍能保持 94% 的初始 PCE。因此,我们证明了系统设计的 ETL 可提高柔性光电器件的光伏性能和机械稳定性。
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来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
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