Two-section passively Mode-locked laser as a test for amplification and absorption parameters of a quantum well based InP optical amplifier at 1300 nm

IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
J. Hazan, S. Tondini, A. Nassar, K.A. Williams, E.A.J.M. Bente
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引用次数: 0
测试基于量子阱的 InP 光放大器在 1300 纳米波长的放大和吸收参数的两段无源模式锁定激光器
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来源期刊
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.70
自引率
4.00%
发文量
99
审稿时长
3.0 months
期刊介绍: The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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