Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-02-02 DOI:10.1109/tnano.2024.3361718

Bowen Wang, Fernando García-Redondo, Marie Garcia Bardon, Hyungrock Oh, Mohit Gupta, Woojin Kim, Diego Favaro, Yukai Chen, Wim Dehaene

引用次数: 0

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电压控制磁各向异性 MRAM 的随机感知建模

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.