Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

IF 1 Q4 CHEMISTRY, MULTIDISCIPLINARY
S. Prayogi
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引用次数: 0

Abstract

Using plasma-enhanced chemical vapor deposition (PECVD), a mixed gas of silane (SiH4) and methane (CH4) was diluted with hydrogen (H2) to produce thin films of silicon nanocrystals embedded in a silicon carbide (SiC) matrix. This method prevents the co-deposition of SiH and SiC from high-temperature annealing procedures. This study experimentally explores the improvement of the electronic structure by adjusting two processing parameters according to classical nucleation theory (ratio of SiH4 to CH4 and working gas pressure). The deposited films were examined using ellipsometry spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy, and photoluminescence to determine grain size, crystal volume fraction, topography, and bond configurations. The results show that increasing the working gas pressure can increase the density of SiC, while increasing the ratio of SiH4 to CH4 can only produce larger grain sizes. This is consistent with how SiC works and grows. Without using a high-temperature annealing procedure, this technique can improve the electrical structure of SiC contained in the SiC matrix formed by PECVD.
增强碳化硅基质中硅纳米晶体的电子结构
利用等离子体增强化学气相沉积(PECVD)技术,用氢气(H2)稀释硅烷(SiH4)和甲烷(CH4)的混合气体,生成嵌入碳化硅(SiC)基体中的纳米硅晶体薄膜。这种方法避免了高温退火程序中 SiH 和 SiC 的共沉积。本研究根据经典成核理论,通过调整两个加工参数(SiH4 与 CH4 的比例和工作气体压力),实验性地探索了电子结构的改进。使用椭偏光谱仪、X 射线衍射、扫描电子显微镜、原子力显微镜和光致发光法对沉积薄膜进行了检测,以确定晶粒尺寸、晶体体积分数、形貌和键合构型。结果表明,增加工作气体压力可以提高 SiC 的密度,而增加 SiH4 与 CH4 的比例只能产生更大的晶粒尺寸。这与碳化硅的工作和生长方式是一致的。在不使用高温退火程序的情况下,该技术可以改善 PECVD 形成的碳化硅基体中所含碳化硅的电气结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Indonesian Journal of Chemistry
Indonesian Journal of Chemistry CHEMISTRY, MULTIDISCIPLINARY-
CiteScore
2.30
自引率
11.10%
发文量
106
审稿时长
15 weeks
期刊介绍: Indonesian Journal of Chemistry is a peer-reviewed, open access journal that publishes original research articles, review articles, as well as short communication in all areas of chemistry, including educational chemistry, applied chemistry, and chemical engineering.
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