High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer

HoSung Kim, Seungchul Lee, Young-Ho Ko, Joon Tae Ahn, Kap-Joong Kim, Duk-Jun Kim, Dae-Myeong Geum, Won-Seok Han
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具有高应变层和低温 p-AlGaAs 包层的全 MOCVD 生长 InAs/GaAs 量子点激光二极管的高温和连续波操作
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