Hydrogen-triggered metal filament rupture in Cu-based Resistance Switches

IF 7.4 3区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science and Technology of Advanced Materials Pub Date : 2024-02-13 DOI:10.1080/14686996.2024.2318213

Bo Xiao, Xuefang Yu, Wenzuo Li, Qingzhong Li, Satoshi Watanabe

引用次数: 0

Abstract

Cation based resistance switches have been considered as promising candidates for memory cells and other novel devices. So far, the most accepted switching processes of such devices are based on th...

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铜基电阻开关中的氢触发金属丝断裂

基于阳离子的电阻开关一直被认为是记忆电池和其他新型器件的理想候选材料。迄今为止，这类器件最常用的开关过程是基于阳离子的电阻开关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Science and Technology of Advanced Materials 工程技术-材料科学：综合

CiteScore

10.60

自引率

3.60%

发文量

审稿时长

4.8 months

期刊介绍： Science and Technology of Advanced Materials (STAM) is a leading open access, international journal for outstanding research articles across all aspects of materials science. Our audience is the international community across the disciplines of materials science, physics, chemistry, biology as well as engineering. The journal covers a broad spectrum of topics including functional and structural materials, synthesis and processing, theoretical analyses, characterization and properties of materials. Emphasis is placed on the interdisciplinary nature of materials science and issues at the forefront of the field, such as energy and environmental issues, as well as medical and bioengineering applications. Of particular interest are research papers on the following topics: Materials informatics and materials genomics Materials for 3D printing and additive manufacturing Nanostructured/nanoscale materials and nanodevices Bio-inspired, biomedical, and biological materials; nanomedicine, and novel technologies for clinical and medical applications Materials for energy and environment, next-generation photovoltaics, and green technologies Advanced structural materials, materials for extreme conditions.