DFT insights on the Be1-xCrxS alloys for optoelectronic and magnetic devices

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
N. Kanwal, M. Ishfaq, S. Aldaghfag, S. Saleem, M. Yaseen
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Abstract

In this work, the electro-optical and magnetic characteristics of Be1-xCrxS (x= 6.25%, 12.5% and 25%) are brought into investigation by employing full potential linearized augmented plane wave (FP-LAPW) scheme designed within density functional theory (DFT). The stability of the Be1-xCrxS alloy is justified by the negative values of formation energy. The band structures and density of states are examined by using GGA functional. Be1-xCrxS compound demonstrates the half-metallic (HM) ferromagnetic behavior for all doping concentrations; spin-up channel reveals the metallic character and other spin version displays the semiconductor (SC) behavior. The values of total magnetic moment (µB) are recorded as 4.0 8.0 and 16.0 µB for corresponding 6.25%, 12.5% and 25%, which mainly arises owing to Cr-3d state. Moreover, optical features including dielectric function ε(ꞷ), reflectivity, refraction, and absorption are explored within range of 0-10 eV. The maximum absorption of incident photons was found in ultraviolet (UV) span which implies their importance for optoelectronic applications. Results reveal that the studied alloy has potential applications in magnetic and optoelectronic gadgets.
关于用于光电和磁性器件的 Be1-xCrxS 合金的 DFT 见解
本研究采用密度泛函理论(DFT)中设计的全势能线性化增强平面波(FP-LAPW)方案,对 Be1-xCrxS(x= 6.25%、12.5% 和 25%)的电光和磁特性进行了研究。形成能的负值证明了 Be1-xCrxS 合金的稳定性。使用 GGA 函数对带状结构和态密度进行了研究。在所有掺杂浓度下,Be1-xCrxS 合金都表现出半金属(HM)铁磁性;自旋上升通道显示出金属特性,而其他自旋版本则显示出半导体(SC)行为。在相应的 6.25%、12.5% 和 25% 浓度下,总磁矩 (µB) 的值分别为 4.0、8.0 和 16.0 µB,这主要是由于 Cr-3d 状态造成的。此外,还在 0-10 eV 范围内研究了介电函数 ε(ꞷ)、反射率、折射率和吸收率等光学特征。入射光子在紫外线(UV)范围内的吸收率最大,这意味着它们在光电应用中的重要性。研究结果表明,所研究的合金在磁性和光电小工具中具有潜在的应用价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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