Growth and crystal structure of CdTe1−xSex (x ≥ 0.75) thin films prepared by the method of high-frequency magnetron sputtering

Pub Date : 2024-01-11 DOI:10.1063/10.0023888
A. I. Kashuba, B. Andriyevsky
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Abstract

CdTe1–xSex (x = 0.75 and 0.95) thin films were deposited on quartz substrate by the method of high-frequency magnetron sputtering. The chemical composition analysis and crystal structure refinement was examined with using X-ray fluorescence spectroscopy and X-ray diffraction data. CdTe1–xSex thin films crystallizes in hexagonal structure [structure type—ZnO, space group P63mc (No. 186)]. Unit cell parameters decrease with increasing Se content in CdTe1–xSex thin films. The value of the optical band gap for CdTe0.25Se0.75 and CdTe0.05Se0.95 was estimating using the Tauc plot and from the maximum position of the first derivative of the transmittance dT/dλ.
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高频磁控溅射法制备的 CdTe1-xSex (x ≥ 0.75) 薄膜的生长和晶体结构
利用高频磁控溅射法在石英衬底上沉积了碲化镉 1-xSex (x = 0.75 和 0.95)薄膜。利用 X 射线荧光光谱和 X 射线衍射数据分析了化学成分和晶体结构。CdTe1-xSex 薄膜的晶体为六方结构[结构类型-ZnO,空间群 P63mc(编号 186)]。单胞参数随 CdTe1-xSex 薄膜中 Se 含量的增加而降低。CdTe0.25Se0.75 和 CdTe0.05Se0.95 的光带隙值是通过陶克曲线图和透射率 dT/dλ 的一阶导数的最大位置估算出来的。
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