Realizing ferromagnetic semiconductors in SrRu1-xZrxO3 alloys

Sheng Xu, Y. Gu, Jun Bian, Xiaoshan Wu
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Abstract

Using first principle calculations, we study the structural, electric and magnetic properties of SrRu1-xZrxO3 (0 ≤ x ≤ 1). The spin-polarization calculations present that SrRu1-xZrxO3 is a ferromagnetic metal at x = 0, a ferromagnetic semiconductor at x = 0.125, 0.25, an antiferromagnetic semiconductor at x = 0.5 and a nonmagnetic insulator at x = 1, which is in agreement with available experiments. As increasing Zr contents, the lattice parameters and band gaps of SrRu1-xZrxO3 increase while the energy difference between antiferromagnetic and ferromagnetic states decreases. Through Ru-O and Zr-O bonds, hybridization between Ru 4d and Zr 4d states near the Fermi level becomes strong. As a result, Ru 4d states split and then metal-insulator transition occurs at x = 0.125 due to Zr doping. Ferromagnetic semiconductors are first predicted in Zr-doped SrRuO3, which may have potential applications in spintronic devices.
在 SrRu1-xZrxO3 合金中实现铁磁半导体
通过第一原理计算,我们研究了 SrRu1-xZrxO3 (0 ≤ x ≤ 1)的结构、电和磁特性。自旋极化计算表明,SrRu1-xZrxO3 在 x = 0 时是铁磁性金属,在 x = 0.125 和 0.25 时是铁磁性半导体,在 x = 0.5 时是反铁磁性半导体,在 x = 1 时是非磁性绝缘体,这与现有实验结果一致。随着 Zr 含量的增加,SrRu1-xZrxO3 的晶格参数和带隙增大,而反铁磁态和铁磁态之间的能量差减小。通过 Ru-O 和 Zr-O 键,费米水平附近的 Ru 4d 和 Zr 4d 态之间的杂化变得很强。因此,Ru 4d 态分裂,然后在 x = 0.125 处由于掺杂 Zr 而发生金属-绝缘体转变。在掺杂 Zr 的 SrRuO3 中首次预言了铁磁半导体,这可能会在自旋电子器件中得到潜在的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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