VLSI Implementation of Hybrid Memristor Based Logic Gates

Ritesh Samanta, Namburi VamsiKrishna, Poongundran Selvaprabhu, Rajeshkumar V, Vetriveeran Rajamani
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引用次数: 0

Abstract

Practical memristors have gained attention from researchers and scientists due to their potential use in a variety of electronic circuits and devices. In our paper, a hybrid Memristor-CMOS (MeMOS) logic circuit was designed and its transient response was analyzed. This circuit, which uses a N-type metal oxide semiconductor (NMOS), and P-type metal oxide semiconductor (PMOS) transistors, Operational amplifiers (OPAMPs), resistors, capacitors and multipliers replicate memristor characteristics. To facilitate the development of real memristor circuit applications, a memristor emulator is utilized for breadboard experiments. This emulator can be connected in a variety of configurations, including serial, parallel, or a combination of both, with identical or opposite polarities. By simply changing the connection, the emulator can be switched between decremental and incremental configurations. In our paper, we implemented AND logic using MeMOS. PSpice simulation of the proposed emulator have been demonstrated for TiO2 memristor model.
基于混合忆阻器逻辑门的VLSI实现
实用忆阻器因其在各种电子电路和器件中的潜在用途而受到研究人员和科学家的关注。设计了一种忆阻器- cmos (MeMOS)混合逻辑电路,并对其瞬态响应进行了分析。该电路使用n型金属氧化物半导体(NMOS)和p型金属氧化物半导体(PMOS)晶体管、运算放大器(opamp)、电阻、电容和乘法器来复制忆阻器的特性。为了便于开发真实的忆阻电路应用,利用忆阻模拟器进行面包板实验。该仿真器可以以各种配置连接,包括串行,并行或两者的组合,具有相同或相反的极性。通过简单地更改连接,模拟器可以在递减和递增配置之间切换。在本文中,我们使用备忘录实现AND逻辑。所提出的仿真器的PSpice仿真已经证明了TiO2忆阻器模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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