128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode

2012 IEEE International Solid-State Circuits Conference Pub Date : 2012-04-03 DOI:10.1109/ISSCC.2012.6177080

Yan Li, Seungpil Lee, K. Oowada, Hao Nguyen, Q. Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, T. Kamei, M. Higashitani, T. Pham, M. Honma, Y. Watanabe, K. Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, F. Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, A. Chu, Cheng Chen, R. Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, J. Chan, Mitsuyuki Watanabe, Dan Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, T. Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, J. Lan, E. Yero, Feng Pan, Patrick Hong, Jang Yong Kang, F. Moogat, Y. Fong, R. Cernea, S. Huynh, Cuong Trinh, M. Mofidi, Ritu Shrivastava, K. Quader

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引用次数: 44

Abstract

This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC) and cost savings from an improved architecture and tightly packed peripheral circuits. Air gap [2,3] technology further improves write throughput by reducing neighbor interference and WL RC. A toggle mode 400Mb/s I/O interface reduces system overhead and enhances overall performance.

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采用19nm技术的128Gb 3b/cell NAND闪存，写入速率为18MB/s，切换模式为400Mb/s

本文通过对前几代NAND的改进来解决挑战，以实现高性能，同时保持低故障位计数(FBC)，并通过改进的架构和紧密封装的外围电路节省成本。气隙[2,3]技术通过减少邻居干扰和WL RC进一步提高了写入吞吐量。切换模式400Mb/s I/O接口降低了系统开销，提高了整体性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE International Solid-State Circuits Conference

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