A double-sourced ASIC for contactless badges

Abstract

Design of the same circuit with two different technology sources for an identification badge is presented. In the first source, a CMOS 3 mu m N-well technology issued with an area of 6 mm/sup 2/ (9300 sq mils), in the second source, a CMOS 2 mu m N-well technology is used for an area of 4 mm/sup 2/ (6200 sq mils). The power supply consists in a 3 V lithium battery. Design for the second source is mostly realized through CAD processing of the first circuit GDS2 file.<>