220 MHz optical receiver with large-area integrated PIN photodiode

Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498) Pub Date : 2003-10-22 DOI:10.1109/ICSENS.2003.1279095

M. Fortsch, H. Zimmermann, H. Pless

引用次数: 5

Abstract

We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications in optical sensing, optical data transmission and optical storage systems. Because of the low capacitance of 0.0105fF/ /spl mu/m/sup 2/ it is possible to design fast OEICs with large-area photodetectors. The proposed optical receiver applying a PIN photodiode with a diameter of 500 /spl mu/m and a capacitance of only 2pF attains a -3dB bandwidth of 220MHz, which corresponds to a maximum data rate of 300Mbit/s.

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带有大面积集成PIN光电二极管的220mhz光接收器

在BiCMOS技术中，我们提出了一种结合高响应性、快速漂移时间和低结电容的PIN光电二极管。这种快速PIN光电二极管允许设计快速光电集成电路(OEIC)，用于光学传感，光学数据传输和光存储系统中的许多先进应用。由于0.0105fF/ /spl μ /m/sup / /的低电容，使得设计具有大面积光电探测器的快速oeic成为可能。采用直径为500 /spl mu/m、电容仅为2pF的PIN光电二极管的光接收器可获得-3dB带宽220MHz，对应的最大数据速率为300Mbit/s。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)

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