Temperature and stress effect of random telegraph noise in FIND RRAM arrays

Abstract

An observation on random telegraph noise (RTN) signal in the read current of a FinFET Dielectric RRAM (FIND RRAM) device is presented in this work. The RTN signal of a FIND RRAM cell is found to change with stress and ambient temperature. Cells with more cycling stress show a stronger tendency to exhibit RTN signals. RTN signals in FIND cells can be generally alleviated by high temperature anneal, and an on chip annealing scheme is proposed and demonstrated.