A 130-nm 76–81-GHz SiGe TDM MIMO Radar Transmitter Array for Automotive Applications

Dušan P. Krčum, Ðorđe P. Glavonjić, I. Milosavljević, V. Milovanovic
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Abstract

A fully-integrated transmitter (TX) for multiple-input multiple-output (MIMO) 79GHz automotive radar applications is presented. The output power scaling and monitoring is implemented in order to enable flexibility and to support robust and reliable operation in complex traffic environments and scenes. The layout of the single channel can easily be replicated to obtain double and quadruple TX arrays. The transmitter delivers 15.12dBm of saturated output power with 11.93dBm output 1-dB compression point, while the peak power-added efficiency simultaneously reaches 15%. The power dissipation of a single TX chain is approximately 265mW from a single 3.3V supply, and scales linearly with the number of chains. Simulated channel gain is 25dB, and covers complete 76-81GHz automotive band of interest. The proposed dual channel transmitter occupies 1.57 mm2 of area, while the quad channel transmitter takes 2.44 mm2, both given as stand-alone chip solutions in the standard industrial SiGe: C HBT 130nm BiCMOS process technology.
一种用于汽车应用的130纳米76 - 81 ghz SiGe TDM MIMO雷达发射机阵列
介绍了一种用于多输入多输出(MIMO) 79GHz汽车雷达的全集成发射机(TX)。实现输出功率缩放和监控,以实现灵活性,并支持在复杂的交通环境和场景中稳健可靠的运行。单通道的布局可以很容易地复制,以获得双和四倍的TX阵列。发射机的饱和输出功率为15.12dBm,输出1-dB压缩点为11.93dBm,同时峰值功率增加效率达到15%。单条3.3V电源的TX链功耗约为265mW,并随链数线性扩展。模拟信道增益为25dB,覆盖完整的76-81GHz汽车频段。所提出的双通道发射机面积为1.57 mm2,四通道发射机面积为2.44 mm2,均为标准工业SiGe: C HBT 130nm BiCMOS工艺技术中的独立芯片解决方案。
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