Broadband power amplifier linearity enhancement under carrier aggregated stimulus using an auxiliary impedance branch

Yushi Hu, H. Sarbishaei, S. Boumaiza
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引用次数: 1

Abstract

High impedance at the drain of a transistor at low frequencies can cause significant distortions in power amplifiers (PAs). This problem is exacerbated by concurrent dual-band signal transmissions required by carrier aggregation. In this paper a technique is proposed which uses a parallel auxiliary impedance branch at the transistor's drain node to maintain low drain impedance for an extensive range of low frequencies, thus improving the PA's linearity and linearizability while it is under dual-band signal transmission.
利用辅助阻抗支路增强载波聚合刺激下的宽带功率放大器线性度
低频率晶体管漏极处的高阻抗会导致功率放大器(PAs)的显著畸变。由于载波聚合需要同时进行双频信号传输,这一问题更加严重。本文提出了一种在晶体管漏极节点处采用并联辅助阻抗支路,在广泛的低频范围内保持低漏极阻抗的技术,从而提高了放大器在双频信号传输时的线性度和线性化能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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