Statistical analysis of CBRAM endurance

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403856

D. A. Robayo, C. Nail, G. Sassine, J. Nodin, M. Bernard, Q. Raffay, G. Ghibaudo, G. Molas, E. Nowak

引用次数: 3

Abstract

In this paper, we address endurance reliability of resistive RAM at array level. To this aim, Al2O3 based Conductive Bridging RAM (CBRAM) kb arrays are studied. Maximum number of cycles the memory can sustain is statistically analyzed. Impact of SET and RESET conditions and Al2O3 thickness on endurance distributions is discussed. Finally, gradual endurance degradation mechanism is discussed along with defect generation in the resistive layer.

查看原文本刊更多论文

CBRAM耐力的统计分析

在本文中，我们研究了阵列级阻性RAM的持久可靠性。为此，研究了基于Al2O3的导电桥接RAM (CBRAM) kb阵列。对内存可以维持的最大周期数进行统计分析。讨论了SET、RESET条件和Al2O3厚度对耐久性分布的影响。最后，讨论了随电阻层缺陷产生而逐渐发生的耐久性退化机制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

自引率

0.00%

发文量