90-nm Dual-Band CMOS LNA with Gain Enhancement for Wireless LAN Applications

Abstract

A 90-nm dual-band high gain CMOS LNA has been proposed. The first stage consists of twin band pass filter which is used to achieve dual bands at 2.4 and 5.2 GHz. High gain is achieved using current starving technique. A buffer stage is used to isolate input-output signals. The two stage LNA delivers a power gain of 20.577 dB and 20.360 dB at 2.4 and 5.2 GHz respectively with a gain deviation of 0.217 dB. The noise figure is observed to be 2.129 dB and 3.177 dB by using a parallel LC input matching network. The proposed LNA operates at a supply voltage of 1.2 V with a power dissipation of 7.32 mW.