Characterization of InP/InGaAs Solar Cells Using Solid Zinc-Diffusion Source and ITO Antireflection Coating

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273561

B. Pan, W. Ho, Jheng-Jie Liu, Yu-Tsen Tsai, Wei-chih Chiu, Hsi-Wen Hsu

引用次数: 0

Abstract

In this study, by measuring optical reflectance, external quantum efficiency and photovoltaic current-voltage under AM 1.5G solar simulation, the electrical and optical performance of InP/InGaAs solar cells with different thicknesses of ITO antireflective-coating were characterized.

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用固体锌扩散源和ITO增透涂层表征InP/InGaAs太阳能电池

本研究通过测量AM 1.5G太阳模拟下的光学反射率、外量子效率和光伏电流电压，表征了不同ITO增透层厚度的InP/InGaAs太阳能电池的电学和光学性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 Opto-Electronics and Communications Conference (OECC)

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