发布求助
文献互助 智能选刊 最新文献

GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET

International Symposium on VLSI Design and Test Pub Date : 2019-07-04 DOI:10.1007/978-981-32-9767-8_57
Shivendra Yadav, Chithraja Rajan, D. Sharma, Sanjay Balotiya
{"title":"GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET","authors":"Shivendra Yadav, Chithraja Rajan, D. Sharma, Sanjay Balotiya","doi":"10.1007/978-981-32-9767-8_57","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":270429,"journal":{"name":"International Symposium on VLSI Design and Test","volume":"20-28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on VLSI Design and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/978-981-32-9767-8_57","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
分享
查看原文 本刊更多论文
基于GaAs-SiGe的新型无掺杂隧道场效应管器件结构
本文章由计算机程序翻译，如有差异，请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
International Symposium on VLSI Design and Test
International Symposium on VLSI Design and Test
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信