Digital-RF transmitter for wireless communication in 90nm CMOS

Abstract

A digital-RF transmitter based on direct up-conversion with segmented cell structure is presented. The prototype is designed in 90-nm CMOS process. The implemented transmitter achieves an ACLR1 / ACLR2 of −37.89 dBc / −46.33 dBc for WCDMA and −37.19 dBc / −44.11 dBc for LTE with 5 MHz channel bandwidth.