Ta0x/Hf02-based RRAM with self-selective feature caused by current compliance modulation

Abstract

In the present study, a Ta0x/Hf02-based resistive random access memory (RRAM) device was developed to generate self-selective feature. After appropriate current compliance in the set process, a threshold switching phenomenon was observed in the reset process. Satisfactory results were gained for the cycle-to-cycle and device- to-device uniform in the following measurements, which was of great significance to the reliability ofthe RRAM device and further exploration ofself-selective characteristic. On the basis ofprevious work and data fitting, the modelling ofthe self-selective I-V curves might be interface limited threshold switch (TS).