Waveforms and Saturation in GaAs Power MESFETs

1978 8th European Microwave Conference Pub Date : 1978-10-01 DOI:10.1109/EUMA.1978.332550

F. Sechi, H. Huang, B. Perlman

引用次数: 5

Abstract

Measurements of voltage and current waveforms in power MESFETs have shown that voltage breakdown of the Schottky barrier is responsible for power saturation and consequent nonlinearity of MESFET amplifiers. Also, high peak drain-gate voltages affect device reliability and noise in FET oscillators.

查看原文本刊更多论文

GaAs功率mesfet的波形和饱和

功率MESFET中电压和电流波形的测量表明，肖特基势垒的电压击穿是导致MESFET放大器功率饱和和随之而来的非线性的原因。此外，高峰值漏极电压影响器件可靠性和FET振荡器的噪声。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

1978 8th European Microwave Conference

自引率

0.00%

发文量