Development of the Method of Determining of InGaN Based Leds Tended to Early Degradation on the Results of Current Tests

Abstract

Low-power commercial InGaN based light-emitting diodes were tested at a constant current of 25 A/cm2 for 7,000 hours. A methode for determining of LEDs tended to early degradation based on electrical and electro-optical characteristics measured in the threshold current region has been developed. It is determined that the rate of degradation is higher for LEDs with low values of the initial quantum efficiency.