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A 5v/3.3v-compatible Flash E/sup 2/PROM Cell With A 400ns/70/spl mu/m Programming Time For Embedded Memory Applications

[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review Pub Date : 1993-06-22 DOI:10.1109/NVMT.1993.696951
J. van Houdt, D. Wellekens, L. Haspeslagh, L. Deferm, G. Groeseneken, H. Maes
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5v/3.3v兼容Flash E/sup 2/PROM单元，编程时间为400ns/70/spl mu/m，适用于嵌入式存储器应用
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review
[1993 Proceedings] Fifth Biennial Nonvolatile Memory Technology Review
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