Influence of Miscut Angle on the Magnetoresistance Behavior of Epitaxial Fe3O4 Thin Films Grown on Vicinal Substrates

S. Arora, I. Shvets
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Abstract

This present work reported here the influence of miscut angle of vicinal MgO (100) substrates (with miscut angle between 1-5� along <011> direction) on the magnetoresistance (MR) behavior of epitaxial magnetite (Fe3O4) films. By varying the miscut angle, we are able to control the step-terrace periodicity of the substrate surface, which allows us to tailor the density of the step-edges induced antiphase boundaries, APBs (nanoscale liner defects formed during growth due to coalescence of neighbouring domains), in epitaxial Fe3O4 films. We found that the contribution from the step-edges induced APBs to the magnetoresistance (MRSE) in Fe3O4 films increases with increase in miscut (up to 2�) and decreases for larger miscut angles. From temperature dependent studies, we observed that the magnitude of MRSE increased with decrease in temperature and peaks at the Verwey transition. The decrease in MRSE for larger miscut samples is attributed to the influence of APB strain-fields on the degree of spin-polarization of Fe3O4 regions on terraces.
误切角对邻近衬底上生长的Fe3O4外延薄膜磁阻性能的影响
本文报道了相邻MgO(100)衬底的错切角(沿方向的错切角在1-5°之间)对外延磁铁矿(Fe3O4)薄膜磁阻(MR)行为的影响。通过改变错切角度,我们能够控制衬底表面的台阶-台阶周期性,这使我们能够定制Fe3O4外延薄膜中台阶边缘诱导的反相边界的密度,apb(在生长过程中由于邻近域的聚结而形成的纳米级衬里缺陷)。我们发现阶梯边缘诱导的APBs对Fe3O4薄膜磁电阻(MRSE)的贡献随着错切角的增加而增加(最大为2°),而当错切角较大时则减小。从温度依赖性研究中,我们观察到MRSE的大小随着温度的降低而增加,并在Verwey转变时达到峰值。较大错切样品的MRSE降低归因于APB应变场对梯田上Fe3O4区域自旋极化程度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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