A resistance model of integrated octagonal-shaped Hall sensor using JFET compact model

Milos Skalsky, S. Banas, V. Panko
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引用次数: 1

Abstract

This paper presents a resistance model of integrated octagonal-shaped Hall sensor device. The nonlinear voltage dependent, temperature and parasitic junction (leakage & capacitance) effects are modeled using JFET compact model. The model topology consists of eight nonlinear resistor models with two types of resistance. This approach reduces the number of model parameters with sustaining high model accuracy and reduces the modeling time significantly. The JFET compact model is available in many commercial SPICE simulators, e.g. Eldo, Spectre or Hspice.
基于JFET紧凑模型的集成八角形霍尔传感器电阻模型
提出了一种集成八角形霍尔传感器的电阻模型。非线性电压依赖、温度和寄生结(漏电和电容)效应采用JFET紧凑模型进行建模。该模型拓扑由8个非线性电阻模型组成,具有两种类型的电阻。该方法减少了模型参数的数量,保持了较高的模型精度,显著缩短了建模时间。JFET紧凑型模型可用于许多商用SPICE模拟器,例如Eldo, Spectre或Hspice。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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