A low power low noise 65nm charge pump using mismatch compensation and smoothing capacitor

D. Samaras, A. Hatzopoulos
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引用次数: 1

Abstract

This work presents a Charge Pump circuit using active current mismatch compensation, which exhibits low power, low noise and good linearity for integer or fractional -N PLL. The proposed charge pump has a Vctrl range of 0.3V to 0.75V, 1.135 × 10-24 A2/Hz output current noise and current mismatch below 0.01%. Additionally, it includes a smoothing capacitor to reduce the transient phenomena which generate non-linearity. The layout dimensions of the proposed charge pump is 88um x 80um. Finally, the charge pump is designed using 65nm TSMC process with a supply voltage of 1V and power consumption of 309uW at 150uA current output.
采用失配补偿和平滑电容的低功耗低噪声65nm电荷泵
本文提出了一种采用有源电流失配补偿的电荷泵电路,该电路具有低功耗、低噪声和良好的线性性,适用于整数或分数n锁相环。所提出的电荷泵的电压控制范围为0.3V至0.75V,输出电流噪声为1.135 × 10-24 A2/Hz,电流失配低于0.01%。此外,它还包括一个平滑电容器,以减少产生非线性的瞬态现象。所建议的电荷泵的布局尺寸为88um x 80um。最后,采用65nm TSMC工艺设计了充电泵,电源电压为1V,输出150uA电流时功耗为309w。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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