Intense room temperature near infrared emission from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416654

J. Zhang, B. Cheng, J. Gao, J.Z. Yu, Q.M. Wang

引用次数: 0

Abstract

Intense near infrared emission was observed from Al/sup 3+/ and Yb/sup 3+/ ions co-implanted SiO/sub 2/ film on silicon. It was found that the addition of Al/sup 3+/ ions could remarkably improve the photoluminescence efficiency of Yb/sup 3+/-implanted SiO/sub 2/ film. No excitation power saturation was observed and trivial temperature quenching factor of 2 was achieved.

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Al/sup 3+/和Yb/sup 3+/离子发出的强室温近红外辐射在硅表面共注入SiO/sub 2/薄膜

Al/sup 3+/和Yb/sup 3+/离子在硅表面共注入SiO/sub 2/薄膜，观察到强烈的近红外发射。结果表明，Al/sup 3+/离子的加入能显著提高Yb/sup 3+/-注入SiO/sub 2/薄膜的光致发光效率。未观察到励磁功率饱和，温度猝灭系数为2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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First IEEE International Conference on Group IV Photonics, 2004.

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