Ultra linear C-band MMIC power amplifiers with 50dbm OIP3

J. Leckey, A. Alexander
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引用次数: 6

Abstract

Two 4W PA MMICs have been developed which cover bandwidths of 5.5–7.1GHz and 7.1–8.5GHz and which demonstrate OIP3 figures of 50dBm at up to 1W total two tone output power from a bias of 8V, 1300mA. The MMICs were fabricated using a highly linear 0.5um GaAs HFET process and packaged in a plastic molded 6mm QFN package. Interpolation of a comprehensive matrix of two tone load pull data was used to set the design target output and driver stage load impedances over bandwidth for the two stage design. The resulting ratio of OIP3 to P1dB is typically 16dB. A thermal design approach guided by finite element analysis and IR spectroscopy measurement was used. To the authors knowledge this is a significant improvement in OIP3 linearity over any other reported multi-stage MMIC amplifier operating at C band.
超线性c波段MMIC功率放大器,50dbm OIP3
已经开发了两个4W PA mmic,覆盖了5.5-7.1GHz和7.1-8.5GHz的带宽,并且在8V, 1300mA的偏置下,在高达1W的总双音输出功率下显示了50dBm的OIP3数字。mmic采用高度线性的0.5um GaAs HFET工艺制造,并封装在塑料模压的6mm QFN封装中。采用双音负载拉数据综合矩阵插值法确定了两级设计的目标输出和驱动级负载阻抗随带宽的变化。得到的OIP3与P1dB的比值通常为16dB。采用了以有限元分析和红外光谱测量为指导的热设计方法。据作者所知,这是OIP3线性度的显着改善,超过任何其他报道的多级MMIC放大器工作在C波段。
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