6 GHz GaN HEMT Linear Power Amplifier

Abstract

The design and analysis of GaN HEMT linear power amplifier to operate at 6 GHz frequency is presented in this work. The GaN HEMT with 800 nm gate length, was power matched at the frequency of 6 GHz. The linear model of the GaN HEMT was derived from the scattering parameter data for designing the power amplifier. The power amplifier displayed a power gain of 9 dB and noise figure of 2 dB at 6 GHz frequency. The Rollet’s Stability factor of the linear power amplifier at 6 GHz frequency is 1.4, hence the amplifier is stable. The scattering parameters of the GaN HEMT power amplifier were also obtained. At 6 GHz frequency the power amplifier exhibited an input return loss of -19 dB.