B. Fleischer, Christos Vezyrtzis, K. Balakrishnan, K. Jenkins
{"title":"A statistical critical path monitor in 14nm CMOS","authors":"B. Fleischer, Christos Vezyrtzis, K. Balakrishnan, K. Jenkins","doi":"10.1109/ICCD.2016.7753334","DOIUrl":null,"url":null,"abstract":"Local variation of delay paths has a significant impact on modern microprocessor performance and yield. A critical path monitor is reported which extracts timing variability information on various critical paths, including sample processor paths. The very compact circuit contains 256 copies of 15 different delay paths, enabling measurement of the statistics of delay variation, as a function of threshold voltage, supply voltage, fanout, temperature, and circuit topology. Measurements of 14nm SOI finFET [1] circuit path delays are presented. The reported sensor can offer a variety of advantages on a processor chip, ranging from testing time improvement to power savings.","PeriodicalId":297899,"journal":{"name":"2016 IEEE 34th International Conference on Computer Design (ICCD)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 34th International Conference on Computer Design (ICCD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.2016.7753334","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Local variation of delay paths has a significant impact on modern microprocessor performance and yield. A critical path monitor is reported which extracts timing variability information on various critical paths, including sample processor paths. The very compact circuit contains 256 copies of 15 different delay paths, enabling measurement of the statistics of delay variation, as a function of threshold voltage, supply voltage, fanout, temperature, and circuit topology. Measurements of 14nm SOI finFET [1] circuit path delays are presented. The reported sensor can offer a variety of advantages on a processor chip, ranging from testing time improvement to power savings.
延迟路径的局部变化对现代微处理器的性能和成品率有着重要的影响。报道了一种关键路径监视器,它可以提取各种关键路径(包括采样处理器路径)上的时序可变性信息。非常紧凑的电路包含15种不同延迟路径的256个副本,可以测量延迟变化的统计数据,作为阈值电压,电源电压,扇出,温度和电路拓扑的函数。给出了14nm SOI finFET[1]电路路径延迟的测量结果。该传感器可以在处理器芯片上提供各种优势,从测试时间的改进到功耗的节省。