Performance of SIMOX transistors at very low temperatures

Proceedings. SOS/SOI Technology Workshop Pub Date : 1988-10-03 DOI:10.1109/SOI.1988.95446

T. Elewa, F. Balestra, S. Cristoloveanu, A. Auberton-Herve, J. Davis

引用次数: 3

Abstract

Summary form only given. The authors describe a systematic investigation of SIMOX (separation by implantation of oxygen) MOSFET properties from ambient down to liquid helium temperature. Comparisons are made between n- and p-channel enhancement and depletion-mode MOSFETs fabricated on SIMOX annealed at high (HTA: 1300 degrees C) and low (LTA: 1200 degrees C) temperatures. The behavior of front and back channels in both edgeless and conventional structures is also pointed out.<>

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SIMOX晶体管在极低温下的性能

只提供摘要形式。作者描述了从环境温度到液氦温度对SIMOX(氧注入分离)MOSFET性能的系统研究。比较了在高温(HTA: 1300℃)和低温(LTA: 1200℃)退火的SIMOX上制备的n沟道和p沟道增强和耗尽模式mosfet。指出了无边缘构造和常规构造中前后通道的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings. SOS/SOI Technology Workshop

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