Towards subvolt and half-mm scale silicon MOS-capacitor MZI modulators

Abstract

We report the demonstration of sub-mm scale silicon lateral MOS-capacitor MZI modulators operating at > 100 Gb/s PAM-4. The 3D packaged transmitter demonstrates an RF swing of 1.2Vpp and a TDECQ of 1.7 dB for MZI with a total active length of 600 µm.