1.3μm InAs/InGaAs QD laser steady output power over 1.07 W

Abstract

Here we report the solid source molecular beam epitaxy (MBE) growth of high quality of InGaAs/ GaAs quantum dot (QD) structures. A laser device is fabricated by the semiconductor process, including Lithography, Inductively Coupled Plasma (ICP), Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etching (RIE). The rigid is 100μm wide and cavity is 2000um long. Room temperature continuous-wave (CW) operation with emission wavelength around 1.31μm is presented. Threshold current (Ith) and threshold current density (Jth) is 0.3A and 150A/cm2 at 15°, and output power at Ith=7A reached as high as 1.079W. We also observe that the spectrum shift from 1315nm to 1333nm when the injection currents increase from 1.5A to 3.5A, and the shift speed is 8.72 nm/A.