A non-traditional approach to resolving multi-layer process-induced metal voiding

S. Doan, Boon Ang
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Abstract

The effective use of SRAM bitmap, end-of-line failure analyses, in-line electron beam defect inspections and focused ion beam (FIB) to identify and resolve an integration-related metal voiding issue is demonstrated in this paper. Because the voiding mechanism was due to a post-metal, multi-layer process interaction, conventional in-line optical defect inspections failed to provide useful information. Electron beam defect inspections and FIB, on the other hand, provided a fast and accurate in-line assessment of the problem, thus enabling a timely resolution of this yield issue.
解决多层工艺引起的金属空洞的非传统方法
本文演示了有效使用SRAM位图、线端失效分析、在线电子束缺陷检测和聚焦离子束(FIB)来识别和解决与集成相关的金属空洞问题。由于空化机制是由于金属后,多层工艺相互作用,传统的在线光学缺陷检测无法提供有用的信息。另一方面,电子束缺陷检测和FIB提供了对问题的快速准确的在线评估,从而能够及时解决这一良率问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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