Simulation and optimization of 2.6–2.8 μm GaSb-based vertical-cavity surface-emitting lasers

Abstract

We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of the active region it is possible to achieve the stable single-fundamental-mode low-threshold operation with emission wavelengths longer than those reported so far for similar devices.