High Performance 150 mm RF GaN Technology with Low Memory Effects

Abstract

Gallium nitride (GaN) heterostructure field effect transistor (HFET) technology is rapidly becoming the solution of choice for a variety of infrastructure applications for 4G and beyond. In response to this rapidly increasing demand, NXP has developed an internal 150mm RF GaN HFET technology for their RF power lineup. This technology features high gain, high efficiency, high power density, very low memory effects, and high reliability in a high volume manufacturing environment that is complemented by NXP's years of experience in the RF power market through their RF LDMOS product line.