J. Tomm, M. Hempel, M. Chi, P. Petersen, U. Zeimer, M. Weyers
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引用次数: 0
Abstract
The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact to the waveguide by point defects is observed.