A Study of Hard Switching Characteristics of GaN-based DC-DC Boost Power Converter using ASM-GaN Compact Model

Abstract

This paper studies the hard switching characteristics of a DC-DC Boost converter based on GaN device using ASM-GaN compact model. The accurate prediction of OFF state output capacitance Coss and I-V characteristics based on underlying Physics by ASM-GaN model results in expected prediction of the dynamic character of switching losses across the power transistor. These simulations can thus be used to predict the switching losses and furthermore help in the optimization of power converter design during the initial phase of design.