Impact of Ge oxidation states in GeOx interfacial layer on electrical characteristics of Ge pMOSFETs

Abstract

Effects of Ge oxidation states in GeOx interfacial layer (IL) on electrical characteristics of Ge pMOSFET with ~ 0.5 nm EOT are comprehensively studied. The gate leakage current density (JG) is impacted by contents of Ge⁺¹ and Ge⁺² in GeOx IL. The hole mobility is influenced by content of Ge⁺³ in GeOx IL. The Ge oxidation states in IL play crucial roles on Ge pMOSFET.