An X-Band Sampled-Line Impedance Sensor in 250-nm GaAs

D. Donahue, M. Roberg, Z. Popovic, T. Barton
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引用次数: 4

Abstract

This paper describes the design and characterization of an X-band MMIC sampled-line impedance sensor. The network is intended for integration into a power amplifier (PA) in applications where load impedance varies, for example in phased arrays. Scalar power detectors placed along a transmission line perform a complex measurement of the load reflection coefficient. The X-band prototype in 250-nm GaAs demonstrates the ability to implement this technique in MMIC technology, as a step towards integration into a MMIC PA. In addition to characterization of the impedance measurement for reflection coefficient magnitudes up to 0.6, the sampled line is compared to a standard 50-ohm line in terms of loss, and a standalone sampler is measured.
250纳米GaAs的x波段采样线阻抗传感器
本文介绍了一种x波段MMIC采样线阻抗传感器的设计和特性。该网络用于集成到功率放大器(PA)中,用于负载阻抗变化的应用,例如相控阵。沿着传输线放置的标量功率检测器执行负载反射系数的复杂测量。250纳米GaAs的x波段原型证明了在MMIC技术中实现该技术的能力,作为集成到MMIC PA的一步。除了对反射系数高达0.6的阻抗测量进行表征外,还将采样线与标准50欧姆线在损耗方面进行比较,并测量独立采样器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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