The Barrier Height Measurement at the Boundary of Metal Semi-Insulating Gallium Arsenide

2007 Siberian Conference on Control and Communications Pub Date : 2007-04-20 DOI:10.1109/SIBCON.2007.371327

G. Ayzenshtat, M. Lelekov, O. Tolbanov

引用次数: 0

Abstract

In the paper, the analysis of the volt-ampere characteristics of the structures from semi-insulating gallium arsenide with various contacts is carried out. The method of the Schottky barrier height measurement for the specified material is given. The measured value of the barrier height is 0.79plusmn0.02 eV.

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金属半绝缘砷化镓边界势垒高度的测量

本文对具有不同触点的半绝缘砷化镓结构的伏安特性进行了分析。给出了特定材料的肖特基势垒高度测量方法。势垒高度的测量值为0.79±0.02 eV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 Siberian Conference on Control and Communications

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