Numerical modelling of amplifying Gires-Tournois microinterferometer by the method of single expression

Abstract

A model of an amplifying semiconductor Gires-Tournois microinterferometer is correctly analysed by the method of single expression (MSE). Interferometer's spectral characteristics versus the distance between the mirror and the active transient layer are obtained for different values of the active layer thickness. The optimal values of the active layer thickness and the distance between the mirror and the active layer for light maximal amplification are defined. Distributions of electric field and power flow density along the structure are obtained at the characteristic points of the structure's spectra.