Macro Model for Flash EEPROM Cells

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194787

M. O’Shea, A. Concannon, K. McCarthy, B. Lane, A. Mathewson, M. Slotboom

引用次数: 2

Abstract

An accurate, numerically efficient model for the transient and DC characteristics of Fowler Nordheim based flash EEPROM cells has been developed. This type of model will allow designers to efficiently and competently embed flash memory into their designs.

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闪存EEPROM单元的宏模型

一个准确的，数值有效的模型，为瞬态和直流特性的福勒诺德海姆基于闪存EEPROM电池已经开发。这种类型的模型将使设计人员能够有效地将闪存嵌入到他们的设计中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

30th European Solid-State Device Research Conference

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