A Non-Quasi-Static SOI MOSFET Model

Abstract

The static and large-signal behaviour of a new model for a submicron partially-depleted (PD) body-tied (BT) silicon-on-insulator (SOI) MOSFET was recently shown to give excellent agreement with measurements. Here, we complete the model validation with a detailed study of its small-signal capabilities up to a frequency of 50 GHz. Additionally, a new direct procedure is described enabling the extraction of a full parasitic network without the need for any on-wafer de-embedding structures.