Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587894

A. Wei, S. Kosier, peixiong zhao, W. Combs, M. DeLaus

引用次数: 13

Abstract

Excess collector current in irradiated NPN BJTs is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter.

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在受辐照的NPN BJTs中，由于氧化捕获电荷引起的发射极而产生的过量集电极电流

在辐照的NPN bjt中，过量的集电极电流与氧化物捕获电荷诱导的反转层相关联，该反转层作为附加的发射极。通过将反转层解释为发射极的延伸来模拟多余的集电极电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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