High performance bulk acoustic resonator based on ZnO:Li piezofilms with high crystallinity and uniformity

C. Lin, J. Tang, S. Chu
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引用次数: 1

Abstract

This work describes a bulk acoustic resonator (BAR) based on Pt/L0.06Z0.94O/Pt/Ti/Si structure. The L0.06Z0.94O piezofilms are grown by radio frequency magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The structural and chemical evolutions through various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (14.87 pC/N) of the LZO film is obtained after 120 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, we adopt the wet chemical etching method and the lift-off process to pattern the piezofilms and electrodes of the BAR device, respectively. The fabricated resonator exhibits high quality factor (Q = 1112) at ~500 MHz. The experimental results verify the crystallinity and the uniformity of the piezofilms play crucial roles of the BAR devices.
基于高结晶度和均匀性ZnO:Li压电薄膜的高性能体声谐振器
本文描述了一种基于Pt/ l0.06 z0.940 o /Pt/Ti/Si结构的体声谐振器(BAR)。采用射频磁控溅射法制备了l0.06 z0.940 o压电薄膜,并进行了紫外-臭氧照明后处理。研究了c轴取向LZO薄膜在不同光照时间下的结构和化学演变。紫外-臭氧照射120 min后,LZO薄膜的压电系数最大,为14.87 pC/N,这是由于晶体化效果较好,氧相关缺陷较少。此外,我们采用湿化学蚀刻法和剥离法分别对BAR器件的压电膜和电极进行了制模。所制备的谐振器在~500 MHz处具有较高的质量因数(Q = 1112)。实验结果验证了压电薄膜的结晶度和均匀性对BAR器件的性能起着至关重要的作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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